Spectral behavior of pulsed Bessel beams focused by a dispersive lens

Starting from the Huygens–Fresnel diffraction integral, the analytical expression for the power spectrum of pulsed Bessel beams focused by a dispersive aperture lens is derived and used to study the spectral anomalies of pulsed Bessel beams in the focused field. Numerical calculation results are given to illustrate the dependence of spectral anomalous behavior on the pulse parameters, truncation parameter and material dispersion of the lens. It is shown that near the phase singularities the spectral anomalies may take place. The potential applications of spectral anomalies of ultrashort pulsed beams in information encoding and information transmission are considered.     

Influence of the comatic aberration of an apertured lens on the focused polychromatic Gaussian beams

The focusing of polychromatic Gaussian beams by an apertured lens with comatic aberration is investigated in this paper. We study the influence of the comatic aberration and truncation parameter on the intensity distribution at the focal plane, and singularities and spectral behavior near the focal plane in detail. The simulation results show that the maximum intensity at the focal plane will shift and split with the gradual increment of comatic aberration. We also find that the decrease of truncation parameter will counteract the influence of comatic aberration, which leads to the intensity variation. Furthermore, the singularity transformation and spectral anomalies are discussed. It is found that with the increment of comatic aberration, some singularities are split into several new singularities, and by combining some of these new singularities with other singularities near the focal plane, they vanish or form new singularities with the continuing increase of comatic aberration. The decreasing value of truncation parameter will cause similar phenomena.     

Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step

Low-temperature step-graded high indium content InAlAs (In% = 0.75) metamorphic buffer layers with reverse step layer grown on GaAs substrate by molecular beam epitaxy are investigated in this paper. The composition and the strain relaxation of the top InAlAs layer are determined by high-resolution triple-axis X-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed and the growth parameters for these samples have little influence on the strain relaxation ratio. Surface morphology is observed by reflection high-energy electron diffraction pattern and atomic force microscopy. The surface morphology is found to depend strongly on both the growth temperature and the As flux. Compared with other samples, the sample growth under the optimized conditions has the smallest value of root mean square surface roughness. Furthermore, the ω − 2θ and ω scans of the triple-axis X-ray diffraction and transmission electron microscopy result also show the sample grown under the optimized conditions has good crystalline quality.     

Efficient Scheme for Entangling Two Distant Atoms

A scheme is presented for the generation of entangled states for two atoms trapped in two distant cavities. In the scheme each atom is resonantly coupled with the respective cavity mode and driven by a strong classical field. The detection of a photon decaying from the cavities and passing through a beam-splitter collapses the atoms to an entangled state. The required atom-field interaction time is very short and thus the decoherence effect is suppressed. Our scheme is within the reach of presently available cavity QED techniques.     

国内首次超导高频系统束流调试及高功率试验

2004—2007年BEPC高频系统从常温腔改建到超导腔, 逐渐解决了改频的物理问题和超导技术的工程难题, 实现了与国际先进技术接轨, 并按期保质完成了工程、调束任务. 高频系统是BEPCⅡ工程首个吸收国外超导技术、自主完成集成和调试成功的大型装置; 2006年7月国内首次超导高频大功率试验成功; 2006年11月完成系统联调, 按期投入BEPCⅡ首轮调束; 同年12月首次投入同步辐射运行; 2007年2至5月, 东、西两套超导高频系统在1MV以上的加速电压均已实现正/负电子1.89GeV注入积累和110/114mA对撞; 在同步辐射运行中, 逐渐达到2.5GeV/250mA、束流功率100kW, 接近国外同类机器水平; 束流试验证明两套高频系统的     

Dynamic stiffness vibration analysis of an elastically connected three-beam system

An exact dynamic stiffness method is developed for predicting the free vibration characteristics of a three-beam system, which is composed of three non-identical uniform beams of equal length connected by innumerable coupling springs and dashpots. The Bernoulli-Euler beam theory is used to define the beams’ dynamic behaviors. The dynamic stiffness matrix is formulated from the general solutions of the basic governing differential equations of a three-beam element in damped free vibration. The derived dynamic stiffness matrix is then used in conjunction with the automated Muller root search algorithm to calculate the free vibration characteristics of the three-beam systems. The numerical results are obtained for two sets of the stiffnesses of springs and a large variety of interesting boundary conditions.     

Light-induced frequency shift of stimulated Raman scattering in Bessel light beams

The medium susceptibility related to stimulated Raman scattering (SRS) is known to be a complex value whose imaginary part determines the SRS gain coefficient whereas the real part constitutes a small fraction of the refractive index at the frequencies of the scattered emission that is proportional to the intensity of the exciting beam. Strong transverse nonuniformity of this beam causes focusing of high-frequency components of the scattered light and defocusing of low-frequency ones that inevitably affect their amplification efficiency. The effect for Gaussian pumping is responsible for a slight shift of the SRS gain spectrum towards higher frequencies. The present work analyzes theoretically SRS excited by a Bessel light beam and demonstrates that the axial component of the scattered emission experiences a frequency shift that is much greater than that for the case of Gaussian beam pumping. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 336–341, May–June, 2008.     

Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 × 10⁻¹⁷ J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power.     

Surface chemistry and catalytic activity of Ni/Al2O3 irradiated with high-energy electron beam

The radiation effects induced effects by electron beam (EB) treatment on the catalytic activity of Ni/γ-Al₂O₃ were studied for the carbon dioxide reforming of methane with different EB energy and absorbed radiation dose. Transmission electron microscope (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to determine the change in structure and surface states of Ni/γ-Al₂O₃ catalyst before and after the EB treatment. Higher energy EB treatment is useful for increasing the proportion of the active sites (such as Ni⁰ and NiAl₂O₄-phase) on the surface. The increase of Ni/Al-ratio indicates that the Ni dispersion on the surface increased with the EB-treatment, resulting in an increase of the active sites, which leads to improving the catalytic activity. XPS measurement also showed a decrease of the surface carbon with EB dose. The maximum 20% increase in the conversion of CO₂/CH₄-mixture into CO/H₂ gas was observed for the catalyst treated with 2 MeV energy and 600 kGy dose of EB relative to untreated.     

Molecular beam epitaxy of GaSb on ZnTe/GaAs: Influence of the chemical composition of ZnTe surface

We have studied the molecular beam epitaxy (MBE) of GaSb films on GaAs (0 0 1) substrates by using ZnTe as a new buffer layer. GaSb films were grown on two distinct ZnTe surfaces and the influence of surface chemical composition of ZnTe on the morphological and structural properties of GaSb films has been investigated. Initial 2-dimensional (2D) growth of GaSb films is obtained on Zn-terminated surface consequently smooth morphology and high crystal quality GaSb films are achieved. The thin GaSb film (0.4 μm) grown on Zn-terminated ZnTe surface reveals considerably narrow X-ray diffraction linewidth (113 arcsec) along with small residual strain, which strongly supports the availability of ZnTe buffer for the growth of high-quality GaSb film.